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TMBYV 10-60
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
MELF (Glass)
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol VRRM IF (AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current Surge non Repetitive Forward Current Ti = 25 C Ti = 25 C tp = 10ms Ti = 25 C tp = 300s Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 15s Value 60 1 20 Sinusoidal Pulse 40 Rectangular Pulse - 65 to + 150 - 65 to + 125 260 C C C Unit V A A
THERMAL RESISTANCE
Symbol Rth (j - l) Junction-leads Parameter Value 110 Unit C/W
August 1999 Ed: 1A
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TMBYV 10-60
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol IR* Tj = 25C Tj = 100C VF* IF = 1A IF = 3A
* Pulse test: tp 300s < 2%.
Test Conditions VR = VRRM
Min.
Typ.
Max. 0.5 10
Unit mA
Tj = 25C
0.7 1
V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25C Tj = 25C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF
Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode.
This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4).
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TMBYV 10-60
Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Reverse current versus VRRM in per cent.
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TMBYV 10-60
Figure 5. Capacitance C versus reverse applied voltage VR (typical values) Figure 6. Surge non repetitive forward current for a rectangular pulse with t 10 ms.
Figure 7. Surge non repetitive forward current versus number of cycles.
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TMBYV 10-60
PACKAGE MECHANICAL DATA MELF Glass
A
DIMENSIONS REF. Millimeters Min.
/ OB
Inches Min. 0.189 0.098 0.018 0.098 Typ. Max. 0.205 0.104 0.024
Typ.
Max. 5.20 2.65 0.60
A B C D
4.80 2.50 0.45 2.50
OD / C C
FOOT PRINT DIMENSIONS (Millimeter)
3
4 6.5
Marking: ring at cathode end. Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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